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High-voltage vertical regrown p-n junction diodes on bulk GaN substrates are reported in this letter with molecular-beam-epitaxy regrown p-GaN on metalorganic-chemical-vapor-deposition grown n-GaN drift region. The highest breakdown voltage is measured at 1135 V, and the differential on-resistance is 3.9 mOhm.cm2 at room temperature. The forward I–V show a turn-ON voltage near 3.9 V and an ideality...
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