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GaN micro-disk resonator arrays were fabricated and measured within the Restrahalen band of GaN. Far-IR spectroscopy shows evidence for localized surface phonon polariton resonances, results which are confirmed by finite-element models of the fabricated structures.
A model based on optical phonon scattering is developed to explain peculiarities in the current drive, transconductance, and high-speed behavior of short-gate-length GaN transistors. The model is able to resolve these peculiarities and provides a simple way to explain transistor behavior in any semiconductor material system in which electron–optical-phonon scattering is strong.
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