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We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency of 370 GHz. The HEMT without back barrier exhibits an extrinsic transconductance of 650 mS/mm and an on/off current ratio of owing to the incorporation of dielectric-free passivation and regrown ohmic contacts with a contact resistance...
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