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As the understanding of tunnel field-effect transistors (TFET) advances, new approaches are emerging to lower off-currents, lower defect density in tunnel junctions, and to increase the highest current at which the subthreshold swing of 60 mV/decade (I60) appears. III-N heterojunctions and transition-metal-dichalcogenide (TMD) materials are forcing some new thinking in junction design and doping.
Transition metal dichalcogenides (TMD) are materials with the form MX2 where M is a metal and X can be Se, S, or Te. These materials have covalent bonding within the layers and Van der Waals bonding between the layers [1]. Unlike graphene, the existence of a band gap eliminates the need to form nanoribbons for two-dimensional crystal tunnel field-effect transistors (TFETs). Among TMDs, molybdenum...
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