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This paper investigates the temperature dependency of charge sharing in 130-nm CMOS technology over a temperature range of 200 to 420 K. TCAD simulation results show the charge sharing collection increases significantly with temperature rising, which is 65% ~ 317%. The LETth of MBU in two SRAM cells is also quantified. The result reveals that the upset LETth of the passive cell decreases in the whole...
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