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The effect of parasitic capacitances and resistances on RF performance is investigated for a recently reported 30-nm transistor with regrown source and drain structure which is to reduce the access resistance in nanoscale MOSFETs. The relatively large lateral parasitic capacitances from the gate electrode to the regrown source and drain regions are quantitatively determined to estimate their impact...
A recently reported nanometre-scaled MOSFET structure with regrown source and drain is examined. The parasitic circuit elements are identified and quantitatively determined to estimate their impact on the transistor's RF performance. Due to the relatively large lateral parasitic capacitances from the gate electrode to the regrown source and drain regions, the current gain cut-off frequency fT of such...
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