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In this paper, metal-oxide-semiconductor (MOS) capacitors fabricated on p-type silicon substrate with hafnium oxide (HfO2 ) film added on silicon dioxide (SiO2) were demonstrated as reliable temperature-detecting devices. The saturation current of MOS (p) capacitor with added HfO2 film is easy to saturate within 0.5 V. From 40 degC to 90degC, each increase of 10degC almost doubles the saturation current...
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