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Photoluminescence at 1.53 um from Er: SiNx on silicon photonic crystal cavities was extracted via fiber tapers with 2.5 x greater collection efficiency compared to free space emission. Fibers were also used to demonstrate a 10 nm tuning range of 750 nm SHG emission from GaP cavities.
In this paper, we present our main results on the structural and optical properties of light-emitting amorphous silicon nitride (SiNx) films fabricated by reactive magnetron cosputtering. In particular, we discuss the origin of the visible emission in amorphous silicon nitride films and investigate the optical emission properties of Erbium-doped amorphous silicon nitride (Er:SiNx). The mechanisms...
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