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Effects of the back-end-of-line layers up to metal-1 on the self-heating and thermal coupling in a multi-finger silicon germanium heterojunction bipolar transistor (SiGe MFT) are investigated. It is observed that the rise in junction temperature is overestimated if the BEOL effects are not considered. A new method for estimating the thermal coupling coefficients is proposed emulating the real operating...
A new orthogonalization scheme is suggested for implementing correlated noise of bipolar transistors. The scheme provides a necessary condition on the non-quasi-static (NQS) models that can be used to obtain an implementation-suitable correlated noise model. One of the solutions presented here corresponds to a single node realization not reported so far. The gm-factor is introduced in the noise analysis...
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