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We investigate the metal-insulator-semiconductor contacts on n-Ge utilizing a ZnO interfacial layer (IL) to overcome the Fermi-level pinning (FLP) effect at metal/Ge interface and reduce the barrier height for electrons. A small conduction band offset of 0.22 eV at the interface between ZnO and n-Ge is obtained, and the ZnO IL leads to the significant reduced contact resistance (Rc) in metal/ZnO/n-Ge...
Vertically aligned single crystalline ZnO nanorod arrays, approximately 3 μm in length and 50-450 nm in diameter are grown by a simple solution approach on a Zn foil substrate. CdS and CdSe colloidal quantum dots are assembled onto ZnO nanorods array using water-soluble nanocrystals capped as-synthesized with a short-chain bifuncional linker thioglycolic acid. The solar cells co-sensitized with both...
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