The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Nitride-based light emitting diodes (LEDs) have received great attention with emission wavelength from ultraviolet to green. However, conventional c-plane GaN LEDs suffer from polarization-related electric fields, which result in poor carrier recombination efficiency and red-shift in the emission wavelength. In order to reduce the undesirable polarization effects, non-polar plane GaN LEDs have been...
The n-GaN layer of c-plane GaInN/GaN light emitting diodes (LEDs) on sapphire was modified to contain a pattern of SiO2 nanorods. This embedded pattern of 300 nm long rods and diameter of 200–400 nm was created by thermal agglomeration of a Ni mask layer and subsequent dry-etching. The light output power (LOP) and external quantum efficiency (EQE) of the resulting LEDs increased both by some 25% to...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.