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We report the development of non‐polar light emitting diodes (LEDs) covering the emission spectra from 480 to 520 nm (dominant wavelength), i.e. from cyan to the green region. The devices are obtained via GaInN‐based homoepitaxy on non‐polar m ‐plane GaN bulk substrate. Owing to the absence of piezoelectric polarization, these LEDs exhibit stable emission color with a wavelength shift less than 3...
We report the growth and structural characteristics of green and yellow (529–576 nm) GaInN/GaN light emitting diodes (LEDs) grown on two types of c‐plane substrates – bulk GaN and sapphire. In this longer wavelength range, depending on the substrate, we find different strain relaxation mechanisms within the GaInN/GaN quantum well (QW) region. In optimized epitaxy, structures on sapphire that contain...
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