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There have been concerns about how far the floating gate based non-volatile flash memory (NVM) can be extended and what will become the future directions of memory development. Several emerging new memories, including magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase-change random access memory (PRAM) and resistance random access memory (RRAM), were studied as...
In this letter, we fabricate Cu/ZrO2:Au/Pt and Cu/ZrO2:Ti/Pt devices via implanting Au or Ti ions. We systematic investigate the resistance switching properties of the two types of metal doped ZrO2-based resistance random access memory. Compared with the undoped (Cu/ZrO2/Pt) device, the metal doped devices show free-electroforming process, narrow distribution of the switching parameters and high device...
In this letter, the resistive switching properties of a ZrO2-based memory film with implanted Ti ions are investigated. The testing results demonstrate that doping Ti in ZrO2 can remove the electroforming process and reduce the variations of switching parameters such as set voltage and resistance in off state. Furthermore, the Ti-doped ZrO2 resistive switching memory also exhibits high device yield...
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