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Inverter circuits based on neat TIPS-pentacene and TIPS-pentacene: polystyrene blend organic field-effect transistors (OFETs) with external resistive load has been studied. Resistive loads of 28 ΜΩ, 40 ΜΩ, 68 ΜΩ and 108 ΜΩ were used to study the inverter transfer characteristics. Transfer characteristics of both types of inverters are improved with increasing load resistance. Inverter with a representative...
Flexible resistive switching memory device is an excellent option for future high density memory and flexible electronics applications. Here, bipolar resistive switching behavior in Al/HfOx/Au resistive random access memory (RRAM) devices fabricated on ultra-flexible polyimide substrates is demonstrated. These devices can be programmed at read-write voltages as low as 0.18 V with on-off current ratios...
Organic field effect transistors (OFETs) have been widely explored for their popular applications in flat panel displays and various kinds of affordable sensors. The overall performance of the device depends on the quality of semiconductor-dielectric interface, and degree of crystalline order in the active layer, close to the above said interface. In the special league of solution processed OFETs,...
A different strategy to form dielectric thin films using atomic layer deposition is proposed, where the dielectric stack consists of three layers in which the middle layer is deposited at a higher temperature than the top and bottom layer. This multi-temperature dielectric stack in metal-insulator-metal capacitor offers improved electrical properties compared to a dielectric film deposited at a single...
A comprehensive study for crystal alignment of TIPS-Pentacene by an off-center spin coating has been presented. In a normal center spin coating method, the centrifugal force on the grains is multidirectional which results into crystals aligning in multiple directions depending on the location on the sample. However in an off-center spin coating method where the samples are kept at a distance away...
I-V characteristic is one of the important results produced by a device simulator. In this article, a novel and interactive matrix based algorithm is presented to draw the device structure in 2-D or 3-D style and to plot the I-V characteristic of the device for user specified doping and biasing conditions. Algorithm creates 2-D or 3-D matrix of the device from device description mentioned by the user...
Energy band diagram is one of the important results produced by a device simulator. In order to provide more flexibility and emphasis over this domain, an algorithm is presented which can be used to draw the device band diagram in any plane in either direction for a user specified biasing conditions. Algorithm uses a three dimensional matrix of the device, which is reduced to a two dimensional matrix...
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