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n-Type epitaxial silicon layers of different thickness and resistivity, grown on highly Sb doped CZ-substrate by ITME (Warsaw), and n-type MCz silicon supplied by Okmetic (Finland) were used for the processing of planar diodes at CiS (Erfurt). For the epi-diodes a standard as well as a diffusion oxygenation process was employed. Irradiations had been performed with 26MeV protons at the cyclotron of...
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