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The influence of oxygen in silicon on bulk damage effects induced by 60 Co-gamma irradiation has been studied in a dose range between 0.2 and 900Mrad. The detector processing and oxygen enrichment were carried out in a common project by the Institute of Micro-sensors CiS using n-type high-resistivity FZ silicon (3–6kΩcm) with 〈111〉 and 〈100〉 orientation. Different oxygen concentrations were...
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