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Poly-Si thin-film transistor SONOS memory cells with various source/drain junctions are studied comprehensively. For pure Schottky-barrier junction, the overlap between source/drain and gate is critical. A 2-nm underlap results in high tunneling resistance and thus poor programming efficiency. Suitable designed modified-Schottky-barrier junction can improve programming speed by Fowler-Nordheim tunneling...
The effects of extreme-ultraviolet (EUV)-irradiation-induced damage on the characteristics of a silicon-oxide-nitride-oxide-silicon (SONOS) memory device are investigated. After EUV irradiation, changes in the memory window and program/erase speed indicate the generation of positive charges and new traps. Retention performance degrades after high-dose irradiation, which indicates that the tunneling...
The impact of extreme ultra-violate (EUV) exposure induced damages on the characteristics of Si-Oxide-Nitride-Oxide-Si (SONOS) memory and nano-crystal (NC) memory are investigated. In SONOS memory, the erase speed slows down and the endurance degrades severely due to the EUV induced deep-level traps in the dielectric stack and can not recover after 600°C annealing. The NC memory exhibits much better...
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