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The HfTiO/Y2O3 stacked dielectric is proposed as the dielectric of metal-insulator-metal (MIM) capacitor. Y2O3 is more thermodynamically stable than HfTiO as contacting with TaN electrode. Interfacial layer thickness and leakage current density can be reduced by inserting a thin Y2O3 layer between HfTiO and TaN. The negative quadruple voltage coefficient of capacitance (VCC-α) of Y2O3 cancels out...
Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4times10-8 A/cm2 at -1 V and high capacitance density of 17.5 fF/mum2 were obtained. A N2-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient...
The electrical stability and reliability of the Trimethylsilane (3MS) based a-SiC:H (SiC) film was investigated for the first time. Capacitance-Voltage (C-V) characteristic instability was observed due to polarization at high electrical field and electron injection at low electrical field. By adding nitrogen content in the film, the dielectric constant and leakage current are reduced but the time...
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