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Random telegraph signal (RTS) is shown to be an intrinsic component of the shift in MOSFET threshold voltage (Vth) due to bias temperature instability (BTI). This is done by starting from a well-known model for negative BTI (NBTI), to derive the formula for RTS-induced Vth shift. Based on this analysis, RTS simply contributes an offset in NBTI degradation, with an acceleration factor that is dependent...
The performance and threshold-voltage variability of vertical SOI FinFETs are compared against those of planar fully depleted SOI MOSFETs with thin buried oxide, via three-dimensional device simulation with atomistic doping profiles and gate line-edge roughness, for the 22 nm CMOS technology node (25 nm gate length). Compact modeling is then used to estimate six-transistor SRAM cell performance metrics...
6T-SRAM cell designs for the 22 nm node are compared via full 3-dimensional cell simulation with Sentaurus (v.2008.09), to allow the benefits of advanced MOSFET structures to be accurately assessed. Segmented MOSFET (SegFET) technology provides for enhanced read stability and write-ability, as compared to conventional planar and tri-gate technologies. It also provides for improved SRAM cell yield,...
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