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Transient voltage suppressor (TVS) has been widely used for electronic system ESD protection. A good TVS is usually costive as it needs some special processes and with extra masking layers for fabrication. A novel TVS design based on the standard CMOS process will be much attractive. This work proposes a new TVS device using a CMOS compatible diode-triggered silicon controlled rectifier (DLVTSCR)...
Low-voltage-triggering silicon-controlled rectifier (LVTSCR) having a gate structure can offer a low trigger voltage in electrostatic discharge (ESD) applications. To avoid the threat of latch-up, the lateral width of LVTSCR is often stretched to obtain a relatively high holding voltage. The resulting lateral dimension increase, however, enlarges the size of LVTSCR. In this letter, a new method to...
Three types of MOS-triggered SCR structures: Merged MOS-triggered SCR, compact MOS-triggered SCR and boundary-MOS-triggered SCR devices have been fabricated and compared in 0.13 μm CMOS process for on-chip ESD protection. TLP testing results show boundary-MOS-triggered SCR structures can achieve adjustable and lower switching voltage, smaller turn-on resistance, faster turn-on speed, the best ESD...
A novel substrate-trigger GGNMOS structure with increasing the substrate resistance and pumping substrate trigger current using the VDD bus line controlled PMOS is proposed and verified in 65 nm CMOS process. The trigger voltage can be significantly reduced to ~3 V to safely protect the ultrathin gate oxide. The proposed structure has lower overshoot voltage which is helpful to protect the ultrathin...
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