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This paper describes ultrathin tantalum-based high-volumetric-density power capacitors with low leakage properties for 1–10-MHz frequency applications. Nanodielectrics with low-defect density were grown on nanoporous tantalum anodes using the self-limiting anodization process. The fundamental mechanisms that govern the film growth and quality were investigated to provide anodization process guidelines...
This paper demonstrates silicon-integrated, thinfilm, high-density tantalum capacitors for integrated power modules. The capacitors in form-factors of less than 75µm showed stable capacitance densities of more than 0.3 µF/mm2 with leakage of less than 0.1 µA/µF at 3 V. To the best of authors' knowledge, this is the highest capacitance density reported till date at the mentioned form-factors. Furthermore,...
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