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In this paper, the influence of the band-gap energy of metal oxide layers on the non-linearity of the device had been investigated. The band-gap energy of the metal oxide layer determines barrier height of tunneling between metal oxides and electrodes for tunneling mechanisms. The optimum barrier height between the metal oxides and electrodes exhibits high non-linear characteristics of the device...
In this paper, the effect of the titanium oxide-based tunnel barrier on the non-linearity and switching uniformity of resistive random access memory has been investigated with the object of achieving excellent device non-linearity and reliability for cross-point array applications. To form the tunnel barrier of titanium oxide, its thickness was engineered using the deposition time. The tunnel barrier...
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