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In this work, a two dimensional (2-D) analytical model and simulation of dual material gate (DMG) Al0.7Ga0.3Sb/InAs High Electron Mobility Transistor (HEMT) has been presented. Superiority of DMG over single material gate (SMG) structure for this kind of HEMTs has been highlighted. Simulation results show the suppression of short channel effects (SCEs) and improvement of carrier transport efficiency...
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