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Co-doped black silicon with sulfur and nitrogen impurities was fabricated by a femtosecond laser in a mixed atmosphere of N2 and SF6. Compared with sulfur-doped black silicon, the infrared absorption of co-doped black silicon shows excellent thermal stability, indicating that the high absorption below the band-gap of silicon is insensitive to the thermal annealing process. According to the electronic...
Supersaturated S-doped black silicon (Si) samples are produced by femtosecond laser fabrication in mixed atmosphere of sulfur hexafluoride and oxygen (SF6/O2). The surface morphology with cone-microstructures has been observed in black Si samples fabricated in mixed atmosphere. After thermal annealing, the absorption below bandgap of black Si is obviously reduced. Moreover, the contents of sulfur...
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