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For the first time, an insulated gate bipolar transistor with a novel buffer is proposed and verified by two-dimensional (2D) mixed device-circuit simulations. The structure of the proposed device is almost identical with that of the conventional IGBT, except for the buffer layer which is formed by employing a three-step, gradually changing doping n + structure. Compared with the conventional...
For the first time, an insulated gate bipolar transistor with a novel buffer, called injection efficiency tuning IGBT (IET-IGBT), is proposed and verified by two-dimensional (2D) mixed device-circuit simulations. The structure of the proposed device is almost identical with that of the conventional IGBT, except for the buffer layer which is formed by employing a very highly doped stripped n +...
In this paper, for the first time, an insulated gate bipolar transistor with an improved buffer is proposed to improve the IGBT losses. The structure of the proposed device is almost identical with that of the conventional IGBT, except for the buffer layer which is formed by employing a very highly doped stripped n+ and a weakly doped n" structure. Compared with the conventional PT-IGBT, the...
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