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We studied sol-gel derived indium-doped zinc oxide (IZO) with various indium contents as a functional buffer layer in inverted polymer:fullerene bulk-heterojunction solar cell. The short-circuit current density was observed to increase by doping indium in pure ZnO buffer layer. The maximum current density was obtained with a 1 at.% indium doping. Although the open-circuit voltage and fill factor reduced...
The authors presented efficient migration of Mott-Wannier excitons to Frenkel excitons via nonradiative energy transfer in our hybrid organic/inorganic assembly of CdSe/ZnS heteronanocrystals in MDMO-PPV homopolymer, reaching an efficiency level of 72.2%. By changing the donor-acceptor amounts, the authors demonstrated nonradiative energy transfer efficiency tuning in a controlled manner from 28.8%...
n-ZnO nanorod/p-CuAlO2 heterojunction diodes have been fabricated on p+-Si (100) substrates. The p-CuAlO2 thin films were deposited on Si substrates by DC-sputtering method and then n-ZnO nanorods were grown by vapor phase transport (VPT) system on the CuAlO2 layer. The well aligned ZnO nanorods show single wurtzite hexagonal structure. Current-voltage characterization of the heterojunction exhibits...
This paper has present a transparent diode device fabricated by p and n type ZnO films using ultrasonic spray pyrolysis (USP) method. The ammonia is added to the solution to provide the N-source and the P type ZnO can be obtained. I-V curve for the transparent diode can be measured and the turn-on voltage of the diode device is 2.3V.
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