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This paper presents a wafer-level integration technology of micro/millimeter-wave integrated passive devices utilizing thick photo-BCB layer as dielectrics. Maximum three layers of metal and two layers of BCB are included in the specimen. Several kinds of RF integrated passive devices (IPDs) such as microwave resonator, low-pass filter (LPF) as well as bandpass filter, are fabricated on 25um/layer...
A method based on equivalent circuit is presented to design a class of compacted millimeter wave bandpass filters in standard 0.18-mum CMOS process. Thin film microstrip is properly constructed on the lossy silicon substrate to realize small insertion loss. Using broadside-coupled scheme, thin film microstrip bandpass filters are designed and fabricated. Equivalent circuit model and theoretical network...
A compacted CMOS K-band bandpass filter incorporating meandering thin film microstrip and defective uniplanar compact photonic bandgap (UC-PBG) slow-wave structures for size reduction are presented. Benefited from the multilayer metal technology of the standard 0.18-mum CMOS process, meandering thin film microstrip and broadside-coupled structures with large coupling degree are properly constructed...
Two novel beeline compact microstrip resonant cells, entitled BCMRCs, are proposed. Their photonic bandgap and slow-wave effect are evaluated. These compact configurations present super broad stopband and improved slow-wave characteristics. Two lowpass filters, consisting of three such BCMRCs connected in series, are designed, fabricated and tested. Both lowpass filters show above 128% (above -10dB)...
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