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This paper presents a wafer-level integration technology of micro/millimeter-wave integrated passive devices utilizing thick photo-BCB layer as dielectrics. Maximum three layers of metal and two layers of BCB are included in the specimen. Several kinds of RF integrated passive devices (IPDs) such as microwave resonator, low-pass filter (LPF) as well as bandpass filter, are fabricated on 25um/layer...
A compacted CMOS K-band bandpass filter incorporating meandering thin film microstrip and defective uniplanar compact photonic bandgap (UC-PBG) slow-wave structures for size reduction are presented. Benefited from the multilayer metal technology of the standard 0.18-mum CMOS process, meandering thin film microstrip and broadside-coupled structures with large coupling degree are properly constructed...
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