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An efficient approach to engineering the Al2O3/GaN positive interface fixed charges (Qit+) by post-dielectric annealing in nitrogen is demonstrated. The remarkable reduction of interface fixed charges from 1.44×1013 to 3×1012 cm−2 was observed, which leads to a record high threshold voltage (VTH) of +7.6 V obtained in the Al2O3/GaN MOSFETs. The positive interface charges were proposed originating...
Er:Si/Al2O3 superlattices are fabricated by pulsed laser deposition (PLD) technique. Photoluminescence (PL) and PL excitation spectra measurements are carried out. The annealing temperature dependent PL intensity curves are presented. The influence of Si crystallization on the Er ions luminescence shows that the thinner the Si layer, and the shorter the distance r, the better its sensitizing performance.
The preparation of metal alloy and monoelemental nanoclusters in silica by Ag, Cu ion sequential implantation and annealing in selected oxidizing or reducing atmosphere is studied. The formation of metastable Ag–Cu alloy is verified in the as-implanted samples by optical absorption spectra, selected area electron diffraction and energy dispersive spectrometer spectrum. The alloy is discomposed at...
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