The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work, we have presented the electrical characteristic of CoMnSi/MgO/n-Si junctions as a function of the doping concentration of Si. Films were fabricated by dc sputtering and post annealed at 400??C for 1 h without breaking the vacuum. The CoMnSi/MgO/n-Si junctions exhibited diode like characteristics at low doping concentration 1016/cc. This can be attributed due to oxide charges or interface...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.