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In this work, we propose an improved small signal equivalent capacitance-voltage (C-V) model to eliminate frequency dispersion in measurement for the AlGaN/GaN heterostructure, and then we calculate the trap density in the buffer layer. Compared with photoluminescence (PL) and high resolution X-ray power diffraction (HRXRD) data, it reveals that the main component of trap is made up of the point defect...
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