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Van der Waals (vdW) bonded heterojunctions composed of diverse two-dimensional (2D) layered materials are emerging as a novel material platform that exhibits intriguing physical phenomena and promises compelling device applications. Here we discuss the development of tunneling devices based on vdW bonded heterojunctions, specially focusing on an Esaki diode with broken gap alignment. Beyond that,...
We review the conception and development of two-dimensional heterojunction interlayer field effect transistor (Thin-TFET), where a steep subthreshold swing (SS) and a high on-current are estimated theoretically. The Thin-TFET has been experimentally demonstrated using WSe2/SnSe2 stacked heterostructures, where the SS is mostly likely limited by the interfacial trap density of states and the parasitic...
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