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The minimum etched pits of 300nm diameter and the trenches of 300nm width with a 50nm depth for both geometries are prepared in the GeSbSn oxide photoresist on the silicon substrates. The lithographic patterns are recorded by direct laser writing, using a 405nm laser diode and 0.9 numerical aperture media disc mastering system. The developed pit diameters in an inorganic oxide photoresist are smaller...
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