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Heat dissipation is a major limitation of high‐performance electronics. This is especially important in emerging nanoelectronic devices consisting of ultra‐thin layers, heterostructures, and interfaces, where enhancement in thermal transport is highly desired. Here, ultra‐high interfacial thermal conductance in encapsulated van der Waals (vdW) heterostructures with single‐layer transition metal dichalcogenides...
Ultra‐High Interfacial Thermal Conductance
In article number 2205726, Baoxing Xu, Philip X.‐L. Feng, Xian Zhang, and co‐workers report on the ultra‐high interfacial thermal conductance in encapsulated van der Waals (vdW) heterostructures with single‐layer transition metal dichalcogenides MX2 (MoS2, WSe2, WS2) sandwiched between two hexagonal boron nitride (hBN) layers, through Raman spectroscopic...
This work reports experimental demonstrations of reversible crystalline phase transition in ultrathin molybdenum ditelluride (MoTe2) controlled by thermal and mechanical mechanisms on the van der Waals (vdW) nanoelectromechanical systems (NEMS) platform, with hexagonal boron nitride encapsulated MoTe2 structure residing on top of graphene layer. Benefiting from very efficient electrothermal heating...
Logic switches enabled by nanoelectromechanical systems (NEMS) offer abrupt on/off‐state transition with zero off‐state leakage and minimal subthreshold swing, making them uniquely suited for enhancing mainstream electronics in a range of applications, such as power gating, high‐temperature and high‐voltage logic, and ultralow‐power circuits requiring zero standby leakage. As NEMS switches are scaled...
The ambient environmental instability and degradation mechanism of single‐ and few‐layer WTe2 are investigated. Oxidation of W and Te atoms appears to be a main reason for degradation. Single‐layer samples' Raman signals disappear within 20 min in air. Few‐layer WTe2 exhibits saturating degradation behavior: only the top layer WTe2 is oxidized; the degraded layer can protect inner layers from further...
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