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The cover illustrates a free‐standing, ferroelectric, hafnia‐zirconia nano‐resonator, realized from 50nm Hf0.5Zr0.5O2 – Al2O3 nanolaminates. Optical excitation and detection of in‐plane and out‐of‐plane resonance modes enables accurate determination of Young’s modulus and residual stress. Further, X‐ray diffraction measurements reveal the free‐standing film to be predominantly orthorhombic with a...
Advances in creating polar structures in atomic‐layered hafnia‐zirconia (HfxZr1−xO2) films not only augurs extensive growth in studying ferroelectric nanoelectronics and neuromorphic devices, but also spurs opportunities for exploring novel integrated nanoelectromechanical systems (NEMS). Design and implementation of HfxZr1−xO2 NEMS transducers necessitates accurate knowledge of elastic and electromechanical...
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