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This paper presents the design of a Power Electronics Building Block (PEBB) based on 1.7 kV SiC MOSFET power modules. The PEBB is an H-bridge converter module that can be cascaded to construct multilevel converters. Novel designs including gate driver with Rogowski shortcircuit protection, powerful distributed controller, isolated A/D sensor with high common-mode noise rejection, double-side cooling...
This paper performs static and dynamic performance characterization of latest generation 900-V and 1.2-kV discrete Silicon Carbide (SiC) MOSFETs from four well-known manufacturers: CREE, ROHM, General Electric (GE) and Sumitomo Electric Industries (SEI). The static characterization performed includes acquisition of output characteristics, transfer characteristics, specific on-state resistances, threshold...
This paper presents an improved phase leg power loop design for enhance mode lateral structure Gallium Nitride (GaN) transistors. Static characterization results of a 650V/30A GaN transistor are presented to determine the design parameters of the gate driver circuits. The control of Common Mode (CM) noise current propagation is considered during the gate driver design by optimizing the power distribution...
This paper shows a gate driver design for 1.7 kV SiC MOSFET module as well a Rogowski-coil based current sensor for effective shortcircuit protection. The design begins with the power architecture selection for better common-mode noise immunity as the driver is subjected to high dv/dt due to the very high switching speed of the SiC MOSFET modules. The selection of the most appropriate gate driver...
In this paper, detailed static characterization of the new 650 V/ 30 A GaN device from GaN Systems is presented. The on-resistance and output capacitance of this device are considerably low making GaN a viable option for high switching frequency (in the range of MHz) medium power applications (> 3 kW). A comprehensive examination of device characteristics and variation of device parasitics depending...
This paper presents an improved phase leg power loop design for enhance mode lateral structure Gallium Nitride (GaN) transistors. Static characterization results of a 650V/30A GaN transistor are presented. The gate driver circuit is designed based on the characterization results. In order to reduce current commutation loop inductance within the GaN phase leg, an improved power loop design with vertical...
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