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A semi-analytic approach for the electromagnetic analysis of large numbers of Through silicon vias (TSV) is presented in this paper. The method is based on cylindrical mode expansion method. The scattering and multi reflection effects between the vertical cylindrical vias are considered by expanding the electromagnetic waves surrounding the vias by cylindrical waves. As the method fully captured the...
A semi-analytic approach for the electromagnetic analysis of large numbers of Through silicon vias (TSV) is presented in this paper. The method is based on cylindrical mode expansion method. The scattering and multi reflection effects between the vertical cylindrical vias are considered by expanding the electromagnetic waves surrounding the vias by cylindrical waves. As the method fully captured the...
The power distribution network (PDN) impedance of 3-D-through silicon vias (TSVs) interposer layer is modeled by considering the metal-oxide-semiconductor (MOS) structure effects. The Lambert W function is proposed to simulate the change of depletion width with the bias voltage in the static field, and the high-frequency MOS capacitance is obtained while considering the charges at the semiconductor–insulator...
A Schottky-Barrier-Detector structure consisting of an array of metallic nanodisks embedded in Si-waveguide achieving ∼96% of total power absorption is proposed. This structure provides a step forward towards fully CMOS-compatible photonic-electronic integrated circuits.
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