The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The next step to confirm the MESFET's ability to handle extreme environments will be testing the buck regulator in the presence of radiation. These measurements will be completed in the coming month and the results presented at the conference. Eventually the goal will be to integrate the MESFET with the feedback circuitry and to more carefully design the buck regulator board, choosing components that...
Power conditioning circuits based on high breakdown voltage silicon MESFETs are being developed as an alternative to existing approaches that use CMOS or bipolar transistors. Results are presented from simulations of a low drop out (LDO) regulator as an example of the Si-MESFET technology. The LDO regulator exploits the depletion mode behavior of an n-channel MESFET to achieve low drop out voltages...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.