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Image processing with Analog Neural Networks, performing horizontal line detection is demonstrated in a single poly, 3-layer metal digital CMOS technology utilizing SOS MESFET devices. Transient characteristics are measured by applying several combinations of grayscale input images. The measured transient response of the ANN array shows good agreement with simulations based on a TOM3 model extracted...
Fully integrated MESFETs have been shown to work on multiple commercial silicon-on-insulator (SOI) and silicon-on-sapphire (SOS) CMOS processes without changing a step in the process flow. The unique features of the MESFET including depletion mode operation, breakdown voltages in excess of 50 V, and easy to adjust, but well controlled threshold voltages have given the designers a cost-free way to...
Power conditioning circuits based on high breakdown voltage silicon MESFETs are being developed as an alternative to existing approaches that use CMOS or bipolar transistors. Results are presented from simulations of a low drop out (LDO) regulator as an example of the Si-MESFET technology. The LDO regulator exploits the depletion mode behavior of an n-channel MESFET to achieve low drop out voltages...
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