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In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented. The simulations show that if the pn-junction and the hetero-junction coincide, the band offsets can significantly improve the SS by suppressing the so-called point tunneling at the pn-junction...
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