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We report ZnO thin film transistors (TFTs) with offset drain for high voltage operation. Offset-drain FETs using Si, a-Si:H, and pentacene have been previously demonstrated [1,2,3]. The TFTs use a bottom gate structure with Al2O3 gate dielectric and ZnO active layers deposited by plasma enhanced atomic layer deposition (PEALD). As the drain offset is increased from 0 μm to 2 μm· the drain-to-source...
We have fabricated ZnO thin film transistors (TFTs) on rigid and flexible substrates with characteristics well suited for displays and more general microelectronic applications. Using weak-reactant plasma enhanced atomic layer deposition (PEALD) we have fabricated single-gate, double-gate, and trilayer ZnO TFTs with good performance and stability. We have also fabricated TFTs and circuits on thin...
Vertical thin film transistors (VTFTs) achieve sub-micron channel length without expensive high-resolution photolithography by taking advantage of a three-dimensional device structure. Recently, ZnO VTFTs with active layers deposited by spatial atomic layer deposition (SALD) were demonstrated with large current density (10 mA/mm), high mobility (>14 cm2/Vs) and large on-off ratio (>107) [1]...
Radiation tolerance is of interest in electronic applications such as radiation sensors, nuclear reactors, x-ray imagers, and high-energy particle accelerators. While properly designed Si MOSFETS are usefully radiation resistant, most thin-film transistors (TFTs), including polysilicon and a-Si:H, are severely degraded by relatively low irradiation dose (typically <1 Mrad) [1, 2]. We previously...
In oxide semiconductors, defect chemistry and hydrogen can influence free carrier concentration and these materials can have strong interactions with the atmosphere and contaminents.[1,2] An inverted staggered structure is commonly used for oxide TFTs and a high-quality passivation layer is needed to provide protection and minimize back channel surface charge changes.[2,3] Negative shifts in turn-on...
We developed an implantable thin film transistor temperature sensor (TFT-TS) to measure temperature changes in the brain. These changes are assumed to be associated with cerebral metabolism and neuronal activity. Two prototype TFT-TSs were designed and tested in-vitro: one with 8 diode-connected single-ended sensors, and the other with 4 pairs of differential-ended sensors in an array configuration...
The radiation tolerance of electronic devices and circuits is of interest for space and some other harsh environment applications. Properly designed deep submicron gate length Si MOSFETs can have small threshold voltage shift and leakage increase for doses of 100 kGy (10 Mrad) or even larger, however polysilicon thin film transistors (TFTs) show significant changes at much lower dose (<; 1 kGy)...
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