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In article number 1808376, Cheng Song, Feng Pan, and co‐workers report a high‐performance two‐terminal selector based on a symmetrical multilayer structure of homogeneous tantalum oxides, possessing bidirectional threshold switching operation, large selectivity, high compliance currents, and tunable threshold voltages. The selector can realize 1S1R read‐write functions, thus avoiding crosstalk issues,...
Two‐terminal selectors with high nonlinearity, based on bidirectional threshold switching (TS) behaviors, are considered as a crucial element of crossbar integration for emerging nonvolatile memory and neuromorphic network. Although great efforts have been made to obtain various selectors, existing selectors cannot fully satisfy the rigorous standard of assorted memristive elements and it is in great...
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