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In this paper, an ultra low voltage ultra low powerbulk-driven operational-transconductance-amplifier (OTA) isproposed. The proposed OTA operates at power supply of 0.35 Vwith bias current of 25nA and power dissipation in the circuit isbelow 40nW. Simulation results for the OTA shows that circuitachieves gain of 60 dB and 83.2° phase margin (PM) with unitygain bandwidth (UGB) of 31.6 KHz. Proposed...
With device dimensions reaching their physical limits, there has been a tremendous focus on development of post CMOS technologies. Carbon based transistors, including graphene and carbon nanotubes, are seen as potential candidates to replace traditional CMOS devices. In that, floating gate graphene field effect transistors (F-GFETs) are preferred over dual gate graphene field effect transistors (D-GFETs)...
Change of linearity and gain with different drain and gate bias has been studied for AlGaN/GaN HEMT on Sapphire substrate. While linearity increases with higher drain bias, maximum gain of the device decreases. Generation of more phonon and its related scattering of electrons decrease the mobility of carries. It further minimizes the drain current at high longitudinal field on 2DEG channel.
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