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The optimized growth conditions for high density germanium (Ge) nanowires and P-doped Ge nanowires on Si (111) substrate were investigated, the phosphorus (P)-doping in Ge nanowires was also characterized. Vapor liquid solid-low pressure chemical vapor deposition (VLS-LPCVD) of Ge nanowires was conducted with different thicknesses of Au film as catalyst, different flow rates of GeH4 as precursor and...
The effects of dopant on the electrochemical properties of spinel-type Li3.97M0.1Ti4.94O12 (M = Mn, Ni, Co) and Li(4-x/3)CrxTi(5-2x/3)O12(x = 0.1, 0.3, 0.6, 0.9, 1.5) were systematically investigated. Charge-discharge cycling were performed at a constant current density of 0.5 mA/cm2 between the cut-off voltages of 3.0 and 1.0 V, the experimental results showed that Cr3+ dopant improved the reversible...
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