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A 4.5–4.9-GHz high-efficiency GaN HEMT amplIfier has been developed based on a dual-band design regarding a multi-harmonic treatment technique considering up to third-order harmonics. To prevent narrowing of the high-efficiency bandwidths due to many reactance control transmission lines connected in cascade for the harmonics, T-shaped stubs which terminate four harmonics at one point on a transmission...
A reversible high-efficiency amplifier/rectifier circuit using one transistor has been proposed. For the gate side of the transistor, an input circuit for the amplifier and a gate adjusting circuit for the rectifier are prepared. By switching the circuits, the operation mode is changed. For the drain side of the transistor, a harmonic treatment circuit can be shared by both operations. The harmonic...
Microwave power transfer has been evaluated at 2.45GHz by using a high-efficiency InGaAs/GaAs pHEMT amplifier and rectifier. The same type of HEMT and harmonic treatment circuit were used for both the amplifier and the rectifier. Harmonic reactive terminations up to the fifth order were applied to the harmonic treatment circuits to obtain a high-efficiency characteristic. The fabricated amplifier...
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