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A dual-band high-efficiency GaN HEMT amplifier with harmonic reactive source and load impedances has been developed at the 2.1-GHz and 2.6-GHz bands. Many circuit components are required for this type of amplifier, since many frequencies have to be treated, which induces circuit loss. Here, a design strategy to avoid an efficiency reduction due to circuit loss is introduced. The fabricated dual-band...
A simultaneous long-distance wireless transmission both of electric power and information is one of the key solutions in the future smart grid systems. Until now, a few systems with a wireless modulated power beam have been reported on this issue [1]. However, since peak-average power ratios for the modulated beam are usually very large, the efficiency for power transmission has remained very low...
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