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4H-SiC carbon face flip-type n-channel implantation and epitaxial (IE)-IGBT with an epitaxial p++ substrate was developed and its switching test was carried out. We were able to achieve an ultrahigh blocking voltage greater than 16 kV, extremely low Von (6.35 V at 20 A), and good temperature stability. The switching operation was achieved by connecting three IGBTs in parallel, with a total ICE of...
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