The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Inversely tapered asymmetric C-rich SiC waveguide with 10-dB insertion loss in 9-mm length reveals strong nonlinear refractive index of 2.5×10−12 cm2/W to enhance four-wave mixing at a conversion efficiency up to −49 dB.
All-optical wavelength and format conversion of pulsed return-to-zero on-off-keying data in two-photon-absorption-free carbon-rich silicon carbide ring waveguide with enhanced nonlinear Kerr switching effect at 12 Gbits/s is demonstrated with an extinction ratio of 20 dB.
An all-optical AND gate made by PECVD grown C-C bond enriched SiC film based add-drop micro-ring with nonlinear refractive index up to 2.4×10−12 cm2/W and 8.7-dB TE/TM polarization discriminated throughput is demonstrated.
All-optical data inversion at 10 Gbit/s in a C-rich SixC1−x based Kerr switch with enhanced nonlinear refractive index of 2.9×10−12 cm2/W is demonstrated.
The self-organized two dimensional (2D) honeycomb-like tin sulfide (SnS) nano-porous structure with high absorption and depolarization features is solid-phase synthesis by RF sputtering. The high absorption coefficient up to 105 cm−1 for planar and nano-porous SnS is enlarged and red-shifted absorption bandedge from 1.43 and 1.16, and the absorption coefficient band edge is increasing to the higher...
All silicon rich silicon carbide based photovoltaic solar cells (PVSCs) are demonstrated by using the PECVD. By using the [CH4]/[CH4+SiH4] fluence ratio of 50%, the i-SixC1−x layer exhibits the C/Si composition ratio of 0.503, which contributes to an additional absorbance at visible light region with the highest absorption coefficient of 2×105 cm−1. The open-circuit voltage and short-circuit current...
The low-temperature PECVD grown carbon-rich silicon carbide film with thickness of 200 nm is employed to passively mode-lock the fiber laser with pulsewidth of 510 fs and linewidth of 5.46 nm.
The smaller Si-QDs result in a current endurance to operate the MOSLED at breakdown edge providing a record of maximum blue-light electroluminescent power at 59.9 µW/cm2 with highest external quantum efficiency of 2.4%
The SiOx thickness affects the Si -QDs based MOSLED. The EL wavelength redshifts from 430 nm to 510 nm when the SiOx thickness increasing from 125 nm to 385 nm. The Si-QDs based MOSLED with the SiOx thickness of 385 nm has the maximum EL power of 469 nW.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.