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A model for filamentary conduction in RRAMs based on Metal-Insulator-Metal (MIM) structures has been developed. The model describes RRAM resistive switching processes by calculating the formation and rupture of conductive filaments (CFs) in the dielectric. The resistance of the electrodes, of the CF and the hopping current in the gap between the CF tip and the electrode, are taken into consideration...
We analyzed ReRAM-based memristors by using the charge-flux relations instead of the traditional current-voltage approach. We used simulated and experimental data to develop a circuit model. Simulations of devices with different conductive filament sizes were employed to fit a 3-parameter model, later on the relations between the model parameters were characterized in-depth. Finally, we used the model...
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