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In this paper we develop and test an analytical model for the total energy dissipation during the reset transition of an unipolar ReRAM device. To do so, we have considered the ReRAM as a memristor, and we have used a memristor model in the Charge-Flux space, instead of the usual current-voltage variables. The used model is very simple, with only three parameters, and provides accurate results. It...
We analyzed ReRAM-based memristors by using the charge-flux relations instead of the traditional current-voltage approach. We used simulated and experimental data to develop a circuit model. Simulations of devices with different conductive filament sizes were employed to fit a 3-parameter model, later on the relations between the model parameters were characterized in-depth. Finally, we used the model...
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